Long Wavelength VCSELs with Enhanced Temperature and Modulation Characteristics

Author

Ortsiefer, M. ; Rosskopf, J. ; Kogel, Benjamin ; Daly, Aidan ; Gorblich, M. ; Xu, Yan ; Greus, C. ; Neumeyr, C.

Author_Institution

VERTILAS GmbH, Garching, Germany

fYear

2014

fDate

7-10 Sept. 2014

Firstpage

74

Lastpage

75

Abstract

In this paper, conventional InP-based BTJ-VCSELs with epitaxial output mirror and emission wavelengths for optical applications at 1.3 μm and 1.55 μm show excellent stationary and dynamic characteristics including output powers well beyond 1 mW at 90°C in conjunction with wide eye openings at 10 Gbit/s modulation rate as well as room temperature data rates up to 25 Gbit/s. In future work, we plan to enhance the modulation rate up to 40 Gbit/s and to increase the operating temperature range for ultra-high bandwidth lasers.

Keywords

III-V semiconductors; indium compounds; laser mirrors; optical modulation; surface emitting lasers; InP; bit rate 10 Gbit/s; emission wavelengths; epitaxial output mirror; indium phosphide-based BTJ-VCSEL; modulation characteristic enhancement; temperature 293 K to 298 K; temperature 90 degC; temperature characteristic enhancement; ultrahigh bandwidth lasers; wavelength 1.3 mum; wavelength 1.55 mum; Optical modulation; Standards; Temperature; Temperature measurement; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference (ISLC), 2014 International

Conference_Location

Palma de Mallorca

Print_ISBN

978-1-4799-5721-7

Type

conf

DOI

10.1109/ISLC.2014.170

Filename

6987457