• DocumentCode
    1767937
  • Title

    Improved laser performance in NIR InP Dot Based Structures with Strained Layers

  • Author

    Elliott, Stella N. ; Kasim, Makarimi ; Smowton, P.M. ; Krysa, A.B.

  • Author_Institution
    Cardiff Sch. of Phys. & Astron., Cardiff Univ., Cardiff, UK
  • fYear
    2014
  • fDate
    7-10 Sept. 2014
  • Firstpage
    86
  • Lastpage
    87
  • Abstract
    We achieve lower elevated temperature threshold current densities: 250Acm-2 (80°C) and 575Acm-2 (125°C) (2mm lasers) for increased strained layer Ga fraction of 0.58 with 714nm lasing in 1mm devices (all broad area uncoated facets).
  • Keywords
    III-V semiconductors; current density; gallium; indium compounds; laser beams; optical multilayers; quantum dot lasers; thermo-optical effects; Ga; InP; NIR InP Dot based structures; all broad area uncoated facets; improved laser performance; lower elevated temperature threshold current densities; size 1 mm; size 2 mm; strained layer Ga fraction; temperature 125 degC; temperature 80 degC; wavelength 714 nm; Conferences; Semiconductor lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference (ISLC), 2014 International
  • Conference_Location
    Palma de Mallorca
  • Print_ISBN
    978-1-4799-5721-7
  • Type

    conf

  • DOI
    10.1109/ISLC.2014.176
  • Filename
    6987463
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1767937