• DocumentCode
    1767977
  • Title

    Optical Bandwidth Broadening through Lowering of the Gain Threshold Condition in Quantum Dot Devices

  • Author

    Finch, P. ; Hutchings, M. ; Blood, P. ; Smowton, P.M. ; Sobiesierski, A. ; Gwilliam, R.M. ; O´Driscoll, I.

  • Author_Institution
    Tyndall Nat. Inst., Cork, Ireland
  • fYear
    2014
  • fDate
    7-10 Sept. 2014
  • Firstpage
    127
  • Lastpage
    128
  • Abstract
    Lowering the threshold gain condition in InAs dots, significantly broadens the optical bandwidth for ultra short pulse generation in the non-thermal regime compared to the thermal regime. Rate equations highlight key parameters which influence this.
  • Keywords
    III-V semiconductors; indium compounds; optical pulse generation; quantum dot lasers; spectral line broadening; InAs; gain threshold condition; indium arsenide dots; nonthermal regime; optical bandwidth broadening; quantum dot devices; rate equations; ultrashort pulse generation; Bandwidth; Mathematical model; Optical devices; Optical pulse generation; Optical pulses; Optical pumping;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference (ISLC), 2014 International
  • Conference_Location
    Palma de Mallorca
  • Print_ISBN
    978-1-4799-5721-7
  • Type

    conf

  • DOI
    10.1109/ISLC.2014.196
  • Filename
    6987483
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1767977