Quantum GaAs Nanodisk Light Emitting Diode Fabricated by Ultimate Top-Down Neutral Beam Etching

Author

Higo, Akio ; Kiba, Takayuki ; Tamura, Yoshinobu ; Thomas, Cedric ; Yunpeng Wang ; Sodabanlu, Hassanet ; Takayama, Junichi ; Sugiyama, Masakazu ; Nakano, Yoshiaki ; Yamashita, Ichiro ; Murayama, Akihiro ; Samukawa, Seiji

Author_Institution

WPI (Adv. Inst. for Mater. Res.), Tohoku Univ., Sendai, Japan

fYear

2014

fDate

7-10 Sept. 2014

Firstpage

133

Lastpage

134

Abstract

Quantum dots (QDs) photonic devices based on III-V compound semiconductor are very attractive optoelectronic due to their thermal independence, low power consumption, and high-speed modulation. We have developed a defect-free, ultimate top-down nanofabrication process for sub-20-nm-diameter GaAs quantum nanodisks (NDs) by employing a bio template and neutral beam etching, and produced 8-nm-thick GaAs NDs embedded in an AlGaAs barrier regrown by the metal organic vapour phase epitaxy (MOVPE). We successfully fabricated a light emitting diode structure and observed the light emission from the quantum energy levels of NDs.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; etching; gallium arsenide; light emitting diodes; nanofabrication; nanophotonics; nanostructured materials; quantum well devices; semiconductor epitaxial layers; vapour phase epitaxial growth; GaAs-AlGaAs; MOVPE; biotemplate; compound semiconductor; defect-free ultimate top-down nanofabrication process; high-speed modulation; light emission; metalorganic vapor phase epitaxy; power consumption; quantum dot photonic devices; quantum energy levels; quantum nanodisk light emitting diode; thermal independence; ultimate top-down neutral beam etching; Educational institutions; Epitaxial growth; Epitaxial layers; Etching; Fabrication; Gallium arsenide; Light emitting diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference (ISLC), 2014 International

Conference_Location

Palma de Mallorca

Print_ISBN

978-1-4799-5721-7

Type

conf

DOI

10.1109/ISLC.2014.199

Filename

6987486