DocumentCode
1767986
Title
Semiconductor Monolithic Mode-Locked Laser for Ultrashort Pulse Generation at 750 Nm
Author
Kong, Lingfu ; Wang, H.L. ; Bajek, D. ; Haggett, S.E. ; Forrest, A.F. ; Wang, Xia L. ; Cui, B.F. ; Pan, J.Q. ; Ding, A.Y. ; Cataluna, M.A.
Author_Institution
Sch. of Eng., Univ. of Dundee, Dundee, UK
fYear
2014
fDate
7-10 Sept. 2014
Firstpage
137
Lastpage
138
Abstract
A novel passively mode-locked semiconductor edge-emitting laser is reported, based on an AlGaAs multi-quantum-well structure. Ultra short pulses are generated at 752 nm, with a 19.4-GHz repetition rate and a pulse duration of 3.5 ps.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; laser mode locking; optical pulse generation; semiconductor lasers; semiconductor quantum wells; AlGaAs; alumininium gallium arsenide multiquantum-well structure; passively mode-locked semiconductor edge-emitting laser; semiconductor monolithic mode-locked laser; time 3.5 ps; ultrashort pulse generation; wavelength 750 nm; wavelength 752 nm; Educational institutions; Fiber lasers; Gallium arsenide; Laser mode locking; Optical pulse generation; Optical pulses; Semiconductor lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2014 International
Conference_Location
Palma de Mallorca
Print_ISBN
978-1-4799-5721-7
Type
conf
DOI
10.1109/ISLC.2014.201
Filename
6987488
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