Title :
1.55 µm GaInNAsSb/GaAs Ridge Waveguide Lasers and Semiconductor Optical Amplifiers for Photonic Integrated Circuits
Author :
Korpijarvi, V.-M. ; Giannoulis, G. ; Makela, Jyrki ; Viheriala, Jukka ; Iliadis, Nikos ; Avramopoulos, H. ; Laakso, Antti ; Guina, M.
Author_Institution :
Optoelectron. Res. Centre, Tampere Univ. of Technol., Tampere, Finland
Abstract :
This paper presents state-of-the-art results concerning 1.55 μm single quantum well (QW) GaInNAsSb/GaAs ridge waveguide (RWG) laser diodes and SOAs, which are expected to outperform traditional InP-based components in temperature characteristics due to the large conduction band offset between the GaInNAsSb QW and GaAs.
Keywords :
III-V semiconductors; conduction bands; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; quantum well lasers; ridge waveguides; semiconductor optical amplifiers; waveguide lasers; GaInNAsSb-GaAs; SOA; conduction band offset; photonic integrated circuits; semiconductor optical amplifiers; single quantum well ridge waveguide laser diodes; temperature characteristics; wavelength 1.55 mum; Gain; Gallium arsenide; Optical waveguides; Semiconductor optical amplifiers; Temperature; Temperature measurement;
Conference_Titel :
Semiconductor Laser Conference (ISLC), 2014 International
Conference_Location :
Palma de Mallorca
Print_ISBN :
978-1-4799-5721-7
DOI :
10.1109/ISLC.2014.208
