DocumentCode
1768004
Title
High Speed Modulation AlGaInAs/InP Microdisk Lasers
Author
Yong-Zhen Huang ; Ling-Xiu Zou ; Xiao-Meng Lv ; Heng Long ; Yue-De Yang ; Jin-Long Xiao ; Yun Du
Author_Institution
State Key Lab. on Integrated Optoelectron., Inst. of Semicond., Beijing, China
fYear
2014
fDate
7-10 Sept. 2014
Firstpage
157
Lastpage
158
Abstract
High speed modulation micro disk laser is investigated with a small signal resonance frequency of 14GHz at 288K. The influences of carrier hole-burning and optical injection on dynamics characteristics are discussed for micro disk and micro ring lasers.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; microdisc lasers; optical hole burning; optical modulation; quantum well lasers; ring lasers; AlGaInAs-InP; carrier hole-burning; dynamics characteristics; frequency 14 GHz; high speed modulation microdisk lasers; microring lasers; optical injection; small signal resonance frequency; temperature 288 K; Laser modes; Laser theory; Modulation; Optical waveguides; Resonant frequency; Semiconductor lasers; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2014 International
Conference_Location
Palma de Mallorca
Print_ISBN
978-1-4799-5721-7
Type
conf
DOI
10.1109/ISLC.2014.211
Filename
6987498
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