DocumentCode
1768069
Title
III-V semiconductor nanowire lasers
Author
Mokkapati, S. ; Saxena, D. ; Nian Jiang ; Qian Gao ; Tan, H.H. ; Jagadish, C.
Author_Institution
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
fYear
2014
fDate
7-10 Sept. 2014
Firstpage
217
Lastpage
218
Abstract
We present results on the design of GaAs and InP nanowire lasers. We will discuss the growth of high quantum efficiency, taper free photonic nanowires for laser applications and demonstrate room-temperature lasing from these nanowires.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; nanophotonics; nanowires; semiconductor lasers; GaAs; III-V semiconductor nanowire lasers; InP; laser applications; quantum efficiency; room-temperature lasing; taper free photonic nanowires; temperature 293 K to 298 K; Charge carrier lifetime; Gallium arsenide; Indium phosphide; Optoelectronic devices; Radiative recombination; Semiconductor lasers; III-V semiconductor; lasers; nanowire; optoelectronic devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference (ISLC), 2014 International
Conference_Location
Palma de Mallorca
Print_ISBN
978-1-4799-5721-7
Type
conf
DOI
10.1109/ISLC.2014.241
Filename
6987528
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