• DocumentCode
    1768078
  • Title

    Extremely Nondegenerate Doubly-Stimulated Two-Photon Emission: Towards a Semiconductor Two-Photon Laser

  • Author

    Reichert, Matthew ; Hagan, David J. ; Van Stryland, Eric W.

  • Author_Institution
    Coll. of Opt. & Photonics, Univ. of Central Florida, Orlando, FL, USA
  • fYear
    2014
  • fDate
    7-10 Sept. 2014
  • Firstpage
    229
  • Lastpage
    230
  • Abstract
    We are working on utilizing the 103 enhancement observed for no degenerate two-photon absorption in semiconductors to obtain two-photon gain in inverted media. Experiments along with analysis for GaAs show potential for gain greater than losses.
  • Keywords
    III-V semiconductors; gallium arsenide; semiconductor lasers; stimulated emission; two-photon processes; GaAs; extremely nondegenerate doubly-stimulated two-photon emission; gallium arsenide; inverted media; semiconductor two-photon laser; Absorption; Educational institutions; Gallium arsenide; Nonlinear optics; Photonics; Probes; Semiconductor lasers; (190.4180) Multiphoton processes; (190.5970) Semiconductor nonlinear optics including MQW;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference (ISLC), 2014 International
  • Conference_Location
    Palma de Mallorca
  • Print_ISBN
    978-1-4799-5721-7
  • Type

    conf

  • DOI
    10.1109/ISLC.2014.247
  • Filename
    6987534
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1768078