• DocumentCode
    1768278
  • Title

    A high-voltage-tolerant stimulator realized in the low-voltage CMOS process for cochlear implant

  • Author

    Kuan-Yu Lin ; Ming-Dou Ker ; Chun-Yu Lin

  • Author_Institution
    Biomed. Electron. Translational Res. Center, Nat. Chiao-Tung Univ., Hsinchu, Taiwan
  • fYear
    2014
  • fDate
    1-5 June 2014
  • Firstpage
    237
  • Lastpage
    240
  • Abstract
    A biomedical stimulator with four high-voltagetolerant output channels, combined with on-chip positive high voltage generator, is proposed. For the purpose of integration with other circuit blocks into a system-on-chip (SoC) for cochlear implant biomedical applications, this design has been realized with the 1.8-V/3.3-V transistors in a 0.18-μm CMOS process. This stimulator only needs one single supply voltage of 1.8 V, but the maximum stimulation voltage can be as high as 7 V. The dynamic bias technique and stacked MOS configuration are used to implement this stimulator in the low-voltage CMOS process, without causing the issues of electrical overstress and gate-oxide reliability during circuit operation.
  • Keywords
    CMOS integrated circuits; cochlear implants; lab-on-a-chip; transistors; biomedical stimulator; circuit blocks; cochlear implant; dynamic bias technique; high-voltage-tolerant output channels; high-voltage-tolerant stimulator; low-voltage CMOS process; on-chip positive high voltage generator; size 0.18 mum; stacked MOS configuration; system-on-chip; transistors; voltage 1.3 V; voltage 1.8 V; CMOS process; Cochlear implants; Generators; Impedance; Logic gates; System-on-chip; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), 2014 IEEE International Symposium on
  • Conference_Location
    Melbourne VIC
  • Print_ISBN
    978-1-4799-3431-7
  • Type

    conf

  • DOI
    10.1109/ISCAS.2014.6865109
  • Filename
    6865109