DocumentCode :
1768278
Title :
A high-voltage-tolerant stimulator realized in the low-voltage CMOS process for cochlear implant
Author :
Kuan-Yu Lin ; Ming-Dou Ker ; Chun-Yu Lin
Author_Institution :
Biomed. Electron. Translational Res. Center, Nat. Chiao-Tung Univ., Hsinchu, Taiwan
fYear :
2014
fDate :
1-5 June 2014
Firstpage :
237
Lastpage :
240
Abstract :
A biomedical stimulator with four high-voltagetolerant output channels, combined with on-chip positive high voltage generator, is proposed. For the purpose of integration with other circuit blocks into a system-on-chip (SoC) for cochlear implant biomedical applications, this design has been realized with the 1.8-V/3.3-V transistors in a 0.18-μm CMOS process. This stimulator only needs one single supply voltage of 1.8 V, but the maximum stimulation voltage can be as high as 7 V. The dynamic bias technique and stacked MOS configuration are used to implement this stimulator in the low-voltage CMOS process, without causing the issues of electrical overstress and gate-oxide reliability during circuit operation.
Keywords :
CMOS integrated circuits; cochlear implants; lab-on-a-chip; transistors; biomedical stimulator; circuit blocks; cochlear implant; dynamic bias technique; high-voltage-tolerant output channels; high-voltage-tolerant stimulator; low-voltage CMOS process; on-chip positive high voltage generator; size 0.18 mum; stacked MOS configuration; system-on-chip; transistors; voltage 1.3 V; voltage 1.8 V; CMOS process; Cochlear implants; Generators; Impedance; Logic gates; System-on-chip; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), 2014 IEEE International Symposium on
Conference_Location :
Melbourne VIC
Print_ISBN :
978-1-4799-3431-7
Type :
conf
DOI :
10.1109/ISCAS.2014.6865109
Filename :
6865109
Link To Document :
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