Emerging resistive switching memory technologies: Overview and current status

Author

Marinella, Matthew J.

Author_Institution

Adv. Semicond. Device R&D, Sandia Nat. Labs., Albuquerque, NM, USA

fYear

2014

fDate

1-5 June 2014

Firstpage

830

Lastpage

833

Abstract

Resistive memory technologies, in particular redox random access memory (ReRAM), are poised as one of the most prominent emerging memory categories to replace NAND flash and fill the important need for a Storage Class Memory (SCM). This is due to low switching energy, low current switching, high speed, outstanding endurance, scalability below 10 nm, and excellent back-end-of-line CMOS compatibility. Furthermore, the analog aspects of memristors have opened the door for many novel applications such as analog math accelerators and neuromorphic computers. This paper provides an overview of resistive memory technologies and their current status, with a focus on redox RAM (ReRAM).

Keywords

CMOS memory circuits; flash memories; random-access storage; NAND flash; ReRAM; SCM; analog math accelerators; back-end-of-line CMOS compatibility; neuromorphic computers; redox random access memory; resistive switching memory; storage class memory; Electrodes; Metallization; Nonvolatile memory; Random access memory; Resistance; Switches; CBRAM; RRAM; ReRAM; memristor; nonvolatile memory; redox memory;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), 2014 IEEE International Symposium on

Conference_Location

Melbourne VIC

Print_ISBN

978-1-4799-3431-7

Type

conf

DOI

10.1109/ISCAS.2014.6865264

Filename

6865264