A low temperature coefficient voltage reference utilizing BiCMOS compensation technique

Author

Yi Huang ; Li Zhu ; Chun Cheung ; Najafizadeh, Laleh

Author_Institution

Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA

fYear

2014

fDate

1-5 June 2014

Firstpage

922

Lastpage

925

Abstract

This paper presents a low temperature coefficient BiCMOS voltage reference circuit designed in IBM´s 8HP Silicon-Germanium (SiGe) technology platform. A BiCMOS compensation approach by combining the temperature properties of HBTs and CMOS transistors has been employed: the Complementary to Absolute Temperature (CTAT) current is generated by a SiGe HBT, while the Proportional to Absolute Temperature (PTAT) current is generated by MOSFETs operating in the subthreshold region. In addition, by adding a nonlinear component, a higher level of temperature compensation is achieved. Simulation results show that with a power supply of 1.2 V, the circuit generates an output voltage of 0.981 V with a temperature coefficient of 0.6 ppm/°C over the temperature range of -25°C to 125°C.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; compensation; heterojunction bipolar transistors; reference circuits; BiCMOS compensation; CMOS transistors; CTAT current; MOSFET; PTAT current; SiGe HBT; SiGe technology platform; complementary to absolute temperature current; low temperature coefficient BiCMOS voltage reference circuit; proportional to absolute temperature current; silicon-germanium technology platform; subthreshold region; temperature -25 C to 125 C; temperature compensation; voltage 0.981 V; voltage 1.2 V; BiCMOS integrated circuits; CMOS integrated circuits; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), 2014 IEEE International Symposium on

Conference_Location

Melbourne VIC

Print_ISBN

978-1-4799-3431-7

Type

conf

DOI

10.1109/ISCAS.2014.6865287

Filename

6865287