Title :
A CMOS fully-integrated wireless power receiver for autonomous implanted devices
Author :
Cabrera, Fabian L. ; Rangel de Sousa, Fernando
Author_Institution :
Electr. Eng. Dept., Fed. Univ. of Santa Catarina, Florianopolis, Brazil
Abstract :
In this paper we present the design of a wireless power receiver fully integrated. The circuit was constrained to occupy a silicon area of 1.5 mm × 1.5 mm in a 0.18 μm RF-CMOS process. The main target was to optimize the part of the power transfer efficiency concerning only the receiver side. In that way, we optimized the quality factor of the integrated inductor, the impedance matching conditions and the rectifier efficiency. The simulated quality factor of the integrated inductor was 22 using a link frequency of 1 GHz. Post-layout simulations of the entire system shows that the combined efficiency of the impedance matching network and the rectifier is 57% when the available power at the inductor is 1 dBm. Moreover, the system uses backscattering to respond to the transmitter, allowing to infer the total power transfer efficiency.
Keywords :
CMOS integrated circuits; elemental semiconductors; impedance matching; integrated circuit design; radio receivers; radio transmitters; radiofrequency integrated circuits; rectifiers; silicon; RF-CMOS; Si; autonomous implanted devices; frequency 1 GHz; impedance matching network; quality factor; rectifier; size 0.18 mum; size 1.5 mm; total power transfer efficiency; transmitter; wireless power receiver; Impedance matching; Inductors; Load modeling; Oscillators; Q-factor; Receivers; Wireless communication;
Conference_Titel :
Circuits and Systems (ISCAS), 2014 IEEE International Symposium on
Conference_Location :
Melbourne VIC
Print_ISBN :
978-1-4799-3431-7
DOI :
10.1109/ISCAS.2014.6865408
