• DocumentCode
    1768894
  • Title

    Abstracting Single Event Transient characteristics variations due to input patterns and fan-out

  • Author

    Bany Hamad, Ghaith ; Hasan, Syed Rafay ; Ait Mohamed, Otmane ; Savaria, Yvon

  • Author_Institution
    Groupe de Rech. en Microelectron. et Microsystemes, Montréal, QC, Canada
  • fYear
    2014
  • fDate
    1-5 June 2014
  • Firstpage
    1468
  • Lastpage
    1471
  • Abstract
    Due to shrinking feature sizes and significant reduction in noise margins, as CMOS technologies evolve toward ultra-deep sub-micron, digital circuits have become more susceptible to soft errors. Therefore, researchers have recently reported several approaches to model Single Event Transient (SET) propagation at gate or higher abstraction levels. However, contemporary techniques model only the possibility that SET pulse may be masked electrically, logically, or by time windowing. In this paper, the propagation induced pulse broadening (PIPB) phenomenon is further investigated and a new model which abstracts this phenomenon is proposed. This paper also investigates and abstracts the impact of input patterns and propagation paths on SET pulse width. Through electrical simulations, we validated our analysis.
  • Keywords
    CMOS integrated circuits; integrated circuit noise; radiation hardening (electronics); CMOS technology; fan out; input patterns; noise margin; propagation induced pulse broadening; single event transient characteristic variations; single event transient propagation; soft error; Abstracts; Attenuation; Integrated circuit modeling; Load modeling; Logic gates; Simulation; Single event transients;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), 2014 IEEE International Symposium on
  • Conference_Location
    Melbourne VIC
  • Print_ISBN
    978-1-4799-3431-7
  • Type

    conf

  • DOI
    10.1109/ISCAS.2014.6865423
  • Filename
    6865423