DocumentCode
1768894
Title
Abstracting Single Event Transient characteristics variations due to input patterns and fan-out
Author
Bany Hamad, Ghaith ; Hasan, Syed Rafay ; Ait Mohamed, Otmane ; Savaria, Yvon
Author_Institution
Groupe de Rech. en Microelectron. et Microsystemes, Montréal, QC, Canada
fYear
2014
fDate
1-5 June 2014
Firstpage
1468
Lastpage
1471
Abstract
Due to shrinking feature sizes and significant reduction in noise margins, as CMOS technologies evolve toward ultra-deep sub-micron, digital circuits have become more susceptible to soft errors. Therefore, researchers have recently reported several approaches to model Single Event Transient (SET) propagation at gate or higher abstraction levels. However, contemporary techniques model only the possibility that SET pulse may be masked electrically, logically, or by time windowing. In this paper, the propagation induced pulse broadening (PIPB) phenomenon is further investigated and a new model which abstracts this phenomenon is proposed. This paper also investigates and abstracts the impact of input patterns and propagation paths on SET pulse width. Through electrical simulations, we validated our analysis.
Keywords
CMOS integrated circuits; integrated circuit noise; radiation hardening (electronics); CMOS technology; fan out; input patterns; noise margin; propagation induced pulse broadening; single event transient characteristic variations; single event transient propagation; soft error; Abstracts; Attenuation; Integrated circuit modeling; Load modeling; Logic gates; Simulation; Single event transients;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), 2014 IEEE International Symposium on
Conference_Location
Melbourne VIC
Print_ISBN
978-1-4799-3431-7
Type
conf
DOI
10.1109/ISCAS.2014.6865423
Filename
6865423
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