Title :
Abstracting Single Event Transient characteristics variations due to input patterns and fan-out
Author :
Bany Hamad, Ghaith ; Hasan, Syed Rafay ; Ait Mohamed, Otmane ; Savaria, Yvon
Author_Institution :
Groupe de Rech. en Microelectron. et Microsystemes, Montréal, QC, Canada
Abstract :
Due to shrinking feature sizes and significant reduction in noise margins, as CMOS technologies evolve toward ultra-deep sub-micron, digital circuits have become more susceptible to soft errors. Therefore, researchers have recently reported several approaches to model Single Event Transient (SET) propagation at gate or higher abstraction levels. However, contemporary techniques model only the possibility that SET pulse may be masked electrically, logically, or by time windowing. In this paper, the propagation induced pulse broadening (PIPB) phenomenon is further investigated and a new model which abstracts this phenomenon is proposed. This paper also investigates and abstracts the impact of input patterns and propagation paths on SET pulse width. Through electrical simulations, we validated our analysis.
Keywords :
CMOS integrated circuits; integrated circuit noise; radiation hardening (electronics); CMOS technology; fan out; input patterns; noise margin; propagation induced pulse broadening; single event transient characteristic variations; single event transient propagation; soft error; Abstracts; Attenuation; Integrated circuit modeling; Load modeling; Logic gates; Simulation; Single event transients;
Conference_Titel :
Circuits and Systems (ISCAS), 2014 IEEE International Symposium on
Conference_Location :
Melbourne VIC
Print_ISBN :
978-1-4799-3431-7
DOI :
10.1109/ISCAS.2014.6865423