Title :
A compact stacked-device output driver in low-voltage CMOS Technology
Author :
Ismail, Yousr ; Yang, Chih-Kong Ken
Author_Institution :
Electr. Eng. Dept., Univ. of California, Los Angeles, Los Angeles, CA, USA
Abstract :
This paper presents a high-voltage output stage suitable for square-wave drive in nanometer-scale CMOS technology. The output stage relies on device stacking to extend output swings reliably beyond that of the technology´s supply rating. Two assisted-charging transistors are required for every additional stacked device to maintain reliability during switching transitions. Doubly- and triply-stacked drive circuits are designed using 2.5V thick-oxide devices in 65nm CMOS technology. Simulation results show that the two drivers operate reliably at 5V and 7.5V outputs respectively.
Keywords :
CMOS analogue integrated circuits; driver circuits; integrated circuit design; integrated circuit reliability; low-power electronics; assisted-charging transistors; compact stacked-device output driver; device stacking; doubly-stacked drive circuit; high-voltage output stage; low-voltage CMOS technology; nanometer-scale CMOS technology; output swing extension; reliability; size 65 nm; square-wave drive; switching transition; technology supply rating; thick-oxide devices; triply-stacked drive circuit; voltage 2.5 V; voltage 5 V; voltage 7.5 V; CMOS integrated circuits; CMOS technology; Electric potential; Integrated circuit reliability; Logic gates; Switches; assisted-charging; device stacking; high-voltage I/O;
Conference_Titel :
Circuits and Systems (ISCAS), 2014 IEEE International Symposium on
Conference_Location :
Melbourne VIC
Print_ISBN :
978-1-4799-3431-7
DOI :
10.1109/ISCAS.2014.6865462
