Title :
TSPC Flip-Flop circuit design with three-independent-gate silicon nanowire FETs
Author :
Xifan Tang ; Jian Zhang ; Gaillardon, Pierre-Emmanuel ; De Micheli, G.
Author_Institution :
Sch. of Comput. & Commun. Sci., EPFL, Lausanne, Switzerland
Abstract :
True Single-Phase Clock (TSPC) Flip-Flops, based on dynamic logic implementation, are area-saving and high-speed compared to standard static flip-flops. Furthermore, logic gates can be embedded into TSPC flip-flops which significantly improves performance. As a promising approach to keep the pace of Moore´s Law, functionality-enhanced devices with multiple independent gates have drown many recent interests. In particular, Three-Independent-Gate Silicon Nanowire FETs (TIG SiNWFETs) can realize the functionality of two serial transistors in a single device. Therefore, they open new opportunities to compact designs in both arithmetic and control circuits. In this paper, we propose TSPC flip-flop implementation with asynchronous set and reset using the compactness of TIG SiNWFET. Electrical simulations show that TIG SiNWFET-based TSPC flip-flop improves nearly 20%, 30% and 7% in area, delay and leakage power respectively as compared to its LSTP FinFET counterpart at 22nm.
Keywords :
elemental semiconductors; field effect transistor circuits; flip-flops; logic design; logic gates; nanoelectronics; nanowires; silicon; LSTP FinFET; Moore law; Si; TIG SiNWFETs; TSPC flip-flop circuit design; area-saving; arithmetic circuits; asynchronous reset; asynchronous set; control circuits; dynamic logic implementation; electrical simulations; functionality-enhanced devices; leakage power; logic gates; multiple independent gates; serial transistors; size 22 nm; static flip-flops; three-independent-gate silicon nanowire FETs; true single-phase clock flip-flops; CMOS integrated circuits; Clocks; Delays; Field effect transistors; Logic gates; Silicon;
Conference_Titel :
Circuits and Systems (ISCAS), 2014 IEEE International Symposium on
Conference_Location :
Melbourne VIC
Print_ISBN :
978-1-4799-3431-7
DOI :
10.1109/ISCAS.2014.6865471