Title :
A novel Injection Locked Rotary Traveling Wave Oscillator
Author :
Zhanjun Bai ; Xing Zhou ; Mason, Ralph
Author_Institution :
Dept. of Electron., Carleton Univ., Ottawa, ON, Canada
Abstract :
This paper proposes a novel Injection Locked Rotary Traveling Wave Oscillator (IL-RTWO). The presented architechture employs a transconductance injector and a Rotary Traveling Wave Oscillator. The combination of switch Metal-Insulator-Metal capacitors (MIM-caps) and a novel use of Complementary Varactor Pairs (CVPs) achieves a 2GHz to 2.3 GHz frequency tuning range and 20kHz frequency resolution. The RTWO scheme is implemented in IBM´s 130nm CMOS technology and consumes a total of 11.3mA current from a 1.2V power supply. The IL-RTWO has an inband phase noise performance of -126dBc/Hz at 100kHz offset from 2.016GHz. This reported inband phase noise is the best in class. To the author´s best knowledge, the implemtation of injection locking and CVPs techniques on RTWO has not been explored before.
Keywords :
CMOS integrated circuits; MIM devices; UHF integrated circuits; UHF oscillators; injection locked oscillators; varactors; CVPs techniques; IBM CMOS technology; IL-RTWO; MIM-caps; complementary varactor pairs; current 11.3 mA; frequency 2 GHz to 2.3 GHz; inband phase noise performance; injection locked rotary traveling wave oscillator; size 130 nm; switch metal-insulator-metal capacitors; transconductance injector; voltage 1.2 V; CMOS integrated circuits; Capacitance; Injection-locked oscillators; Phase noise; Tuning; Varactors; Digitally-controlled oscillators; Injection-locked oscillators; Phase noise; Rotary Traveling Wave Oscillator;
Conference_Titel :
Circuits and Systems (ISCAS), 2014 IEEE International Symposium on
Conference_Location :
Melbourne VIC
Print_ISBN :
978-1-4799-3431-7
DOI :
10.1109/ISCAS.2014.6865498
