An analysis method of electromigration in integrate circuit based on simulation technology

With the continuous development of integrated circuits and the reliability problem of integrated circuits caused by electromigration increasingly protruding, electromigration has become one of the most lasting and important challenges. In this paper, we put forward a new method of electromigration failure analysis based on simulation technology. Through establishment of the internal circuit model of integrated circuits and the internal structure model, analysis of the voltage distribution of various ports and the current density distribution of the internal structure, the potential failure points in the interconnection lines of integrated circuits are found out and the failure lifetime calculated.