DocumentCode
1769221
Title
Highly reliable memory-based Physical Unclonable Function using Spin-Transfer Torque MRAM
Author
Le Zhang ; Xuanyao Fong ; Chip-Hong Chang ; Zhi Hui Kong ; Roy, Kaushik
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
fYear
2014
fDate
1-5 June 2014
Firstpage
2169
Lastpage
2172
Abstract
In recent years, Physical Unclonable Function (PUF) based on the inimitable and unpredictable disorder of physical devices has emerged to address security issues related to cryptographic key generation. In this paper, a novel memory-based PUF based on Spin-Transfer Torque (STT) Magnetic RAM, named as STT-PUF, is proposed as a key generation primitive for embedded computing systems. By comparing the resistances of STT-MRAM memory cells which are initialized to the same state, response bits can be generated by exploiting the inherent random mismatches between them. To enhance the robustness of response bits regeneration, an Automatic Write-Back (AWB) technique is proposed without compromising the resilience of STT-PUF against possible attacks. Simulations show that the proposed STT-PUF is able to produce raw response bits with uniqueness of 50.1% and entropy of 0.985 bit per cell. The worst-case Bit-Error Rate (BER) under varying operating conditions is 6.6 × 10-6.
Keywords
MRAM devices; cryptography; embedded systems; semiconductor device reliability; AWB technique; STT-MRAM memory cells; STT-PUF; automatic write-back; cryptographic key generation; embedded computing systems; key generation primitive; magnetic RAM; memory-based physical unclonable function; physical devices; spin-transfer torque MRAM; Bit error rate; Cryptography; MATLAB; Robustness; Saturation magnetization; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), 2014 IEEE International Symposium on
Conference_Location
Melbourne VIC
Print_ISBN
978-1-4799-3431-7
Type
conf
DOI
10.1109/ISCAS.2014.6865598
Filename
6865598
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