Field driven STT-MRAM cell for reduced switching latency and energy

Author

Patel, Rahul ; Ipek, Engin ; Friedman, Eby G.

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Rochester, Rochester, NY, USA

fYear

2014

fDate

1-5 June 2014

Firstpage

2173

Lastpage

2176

Abstract

A field driven approach to STT-MRAM switching is proposed as a method for reducing the switching latency of an MTJ in high performance caches. An MRAM array model is presented to characterize the switching energy and maximum achievable reduction in energy using the field driven approach. The switching latency per bit is reduced by more than a factor of ten. The resultant switching energy per bit is reduced by 82% as compared to a standard STT-MRAM.

Keywords

MRAM devices; magnetic tunnelling; MRAM array model; MTJ; STT-MRAM switching; field-driven STT-MRAM cell; standard STT-MRAM; switching energy; switching energy reduction; switching latency reduction; Arrays; Magnetic switching; Magnetic tunneling; Resistance; Switches; Torque; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), 2014 IEEE International Symposium on

Conference_Location

Melbourne VIC

Print_ISBN

978-1-4799-3431-7

Type

conf

DOI

10.1109/ISCAS.2014.6865599

Filename

6865599

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1769223