Scalable behavior modeling for SCR based ESD protection structures for circuit simulation

Author

Li Wang ; Rui Ma ; Chen Zhang ; Zongyu Dong ; Fei Lu ; Wang, Aiping ; Xin Wang ; Jian Liu ; Siqiang Fan ; He Tang ; Baoyong Chi ; Liji Wu ; Ren, T.L.

Author_Institution

Dept. of Electr. Eng., Univ. of California, Riverside, Riverside, CA, USA

fYear

2014

fDate

1-5 June 2014

Firstpage

2333

Lastpage

2336

Abstract

This paper reports a new scalable behavioral modeling technique for silicon controlled rectifier (SCR) based electrostatic discharge (ESD) protection structures using Verilog-A language. Accurate models were developed for various low-triggering voltage SCR ESD (LVSCR) protection structures implemented in a foundry 180nm RF process, which were validated by circuit simulation and ESD measurement.

Keywords

BiCMOS integrated circuits; electrostatic discharge; hardware description languages; integrated circuit modelling; low-power electronics; radiofrequency integrated circuits; thyristors; ESD measurement; LVSCR protection structures; RF process; SCR based ESD protection structures; Verilog-A language; circuit simulation; electrostatic discharge; low-triggering voltage SCR ESD protection structures; scalable behavior modeling; silicon controlled rectifier; size 180 nm; Circuit simulation; Electrostatic discharges; Integrated circuit modeling; Logic gates; SPICE; Testing; Thyristors; Behavior Model; ESD; LVSCR; SCR;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), 2014 IEEE International Symposium on

Conference_Location

Melbourne VIC

Print_ISBN

978-1-4799-3431-7

Type

conf

DOI

10.1109/ISCAS.2014.6865639

Filename

6865639