DocumentCode
1769360
Title
Highly efficient light extraction GaN-based light emitting diode with nano-rods in micro-holes compound structure
Author
Che-Yu Liu ; Jhih-Kai Huang ; Da-Wei Lin ; Hung-Wen Huang ; Po-Tsung Lee ; Gou-Chung Chi ; Hao-Chung Kuo ; Chun-Yen Chang
Author_Institution
Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2014
fDate
8-13 June 2014
Firstpage
1
Lastpage
2
Abstract
We demonstrated a high-power GaN-based light emitting diodes (LEDs) which have micro-hole array and nano-rods compound structure by nanoimprint lithography (NIL). The nanorods structure inside the micro-hole could efficiently guide the trapped light from the GaN epilayer. Therefore, the light output power of LED with micro-hole array and nanorods was as high as 1.27 times, as compared with standard LED.
Keywords
III-V semiconductors; gallium compounds; light emitting diodes; micro-optics; nanolithography; nanophotonics; nanorods; wide band gap semiconductors; light emitting diode; light extraction; micro-hole array; micro-holes compound structure; nano-rods compound structure; nanoimprint lithography; Arrays; Gallium nitride; Light emitting diodes; Nanostructures; Power generation; Standards;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
6988290
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