DocumentCode
1769361
Title
Impact of surface recombination on the performance of phosphor-free InGaN/GaN nanowire white light emitting diodes
Author
Zhang, Shaoting ; Connie, A.T. ; Nguyen, H.P.T. ; Wang, Qijie ; Shih, I. ; Mi, Z.
Author_Institution
Dept. of Electr. & Comput. Eng., McGill Univ., Montreal, QC, Canada
fYear
2014
fDate
8-13 June 2014
Firstpage
1
Lastpage
2
Abstract
We show that the performance of InGaN/GaN axial nanowire LEDs is largely limited by the poor carrier injection efficiency. We have further demonstrated high performance phosphor-free white LEDs using InGaN/GaN/AlGaN dot-in-a-wire core-shell heterostructures.
Keywords
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; nanowires; phosphors; semiconductor quantum wires; surface recombination; InGaN-GaN; InGaN-GaN-AlGaN; carrier injection efficiency; indium gallium nitride-gallium nitride-aluminium gallium nitride dot-in-a-wire core-shell heterostructures; phosphor-free indium gallium nitride-gallium nitride axial nanowire white LED; surface recombination; Aluminum gallium nitride; Charge carrier processes; Gallium nitride; Light emitting diodes; Nanoscale devices; Radiative recombination;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
6988291
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