Title :
Impact of surface recombination on the performance of phosphor-free InGaN/GaN nanowire white light emitting diodes
Author :
Zhang, Shaoting ; Connie, A.T. ; Nguyen, H.P.T. ; Wang, Qijie ; Shih, I. ; Mi, Z.
Author_Institution :
Dept. of Electr. & Comput. Eng., McGill Univ., Montreal, QC, Canada
Abstract :
We show that the performance of InGaN/GaN axial nanowire LEDs is largely limited by the poor carrier injection efficiency. We have further demonstrated high performance phosphor-free white LEDs using InGaN/GaN/AlGaN dot-in-a-wire core-shell heterostructures.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; nanowires; phosphors; semiconductor quantum wires; surface recombination; InGaN-GaN; InGaN-GaN-AlGaN; carrier injection efficiency; indium gallium nitride-gallium nitride-aluminium gallium nitride dot-in-a-wire core-shell heterostructures; phosphor-free indium gallium nitride-gallium nitride axial nanowire white LED; surface recombination; Aluminum gallium nitride; Charge carrier processes; Gallium nitride; Light emitting diodes; Nanoscale devices; Radiative recombination;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
