DocumentCode
1769431
Title
Memristive nano-crossbar arrays enabling novel computing paradigms
Author
Linn, Eike
Author_Institution
Inst. fur Werkstoffe der Elektrotech. II (IWE II), RWTH Aachen Univ., Aachen, Germany
fYear
2014
fDate
1-5 June 2014
Firstpage
2596
Lastpage
2599
Abstract
Passive nano-crossbars arrays are highly attractive structures which enable ultra dense non-volatile memories, novel logic-in-memory approaches, and efficient synaptic connections for neuromorphic computing approaches. The basic junction element is a memristive element, i.e. a non-volatile two terminal resistively switching device. In conjunction with a select device paradigm large-scale arrays are feasible.
Keywords
logic circuits; memristors; nanoelectronics; passive networks; random-access storage; computing paradigms; junction element; logic-in-memory; memristive element; memristive nano-crossbar arrays; neuromorphic computing; nonvolatile memories; nonvolatile two terminal resistively switching device; passive nano-crossbars arrays; Computational modeling; Electronic countermeasures; Finite element analysis; Integrated circuit modeling; Nanoscale devices; Switches; Switching circuits; Memristor; complementary resistive switch; crossbar array; memristive device; resistive switching;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (ISCAS), 2014 IEEE International Symposium on
Conference_Location
Melbourne VIC
Print_ISBN
978-1-4799-3431-7
Type
conf
DOI
10.1109/ISCAS.2014.6865704
Filename
6865704
Link To Document