Improved charge shared scheme for low-energy match line sensing in ternary content addressable memory

Author

Islam, Md Shariful ; Ali, Syed Imran

Author_Institution

Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh

fYear

2014

fDate

1-5 June 2014

Firstpage

2748

Lastpage

2751

Abstract

An improved match line (ML) sensing scheme for ternary content addressable memory (TCAM) is presented in this paper. Selective precharge combined with charge sharing technique reduces ML search energy consumption. Use of lower V_t transistors in the sense amplifier allows further reduction of energy. Series gating transistor eliminates energy consumption associated with increased leakage of lower V_t MOSFETs. Simulations are performed using 180 nm 1.8 V CMOS logic in HSPICE. For similar search speed, the proposed scheme shows minimum 24% and 35% energy reductions compared to two existing similar sensing schemes.

Keywords

CMOS logic circuits; MOSFET; SPICE; content-addressable storage; energy consumption; nanotechnology; CMOS logic; HSPICE; MOSFET; TCAM; charge shared scheme; charge sharing technique; match line sensing scheme; search energy consumption; sense amplifier; series gating transistor; size 180 nm; ternary content addressable memory; voltage 1.8 V; Associative memory; Differential amplifiers; Energy consumption; Sensors; Threshold voltage; Transistors; charge sharing; content-addressable memory; energy consumption; lower threshold; selective precharge; sensing scheme; ternary;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (ISCAS), 2014 IEEE International Symposium on

Conference_Location

Melbourne VIC

Print_ISBN

978-1-4799-3431-7

Type

conf

DOI

10.1109/ISCAS.2014.6865742

Filename

6865742