• DocumentCode
    1769518
  • Title

    A novel dimensional analysis method for TSV modeling and analysis in three dimensional integrated circuits

  • Author

    Salah, Khaled ; Ismail, Yousr

  • Author_Institution
    Mentor Graphics, Cairo, Egypt
  • fYear
    2014
  • fDate
    1-5 June 2014
  • Firstpage
    2764
  • Lastpage
    2767
  • Abstract
    Dimensional analysis is one of the most powerful modeling methods, where it is used to reduce the number of physical variables through combining two or more variables into a single dimension neutral one in order to simplify the process of describing a relationship among those variables. That makes curve fitting to obtain final equations simpler. In this paper, dimensional analysis is applied as a new design methodology for TSV modeling. By using the dimensional analysis and the curve-fitting technique, simple formulas of TSV parameters, such as resistance, capacitance, and inductance are obtained. The results are compared with previous work that model TSVs based on measurements, where excellent agreement is obtained.
  • Keywords
    curve fitting; integrated circuit modelling; three-dimensional integrated circuits; TSV modeling; curve fitting; dimensional analysis; three dimensional integrated circuits; Analytical models; Capacitance; Curve fitting; Integrated circuit interconnections; Integrated circuit modeling; Mathematical model; Through-silicon vias; Dimensional analysis; Modeling; TSV; Three-Dimensional ICs; Through Silicon Via;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (ISCAS), 2014 IEEE International Symposium on
  • Conference_Location
    Melbourne VIC
  • Print_ISBN
    978-1-4799-3431-7
  • Type

    conf

  • DOI
    10.1109/ISCAS.2014.6865746
  • Filename
    6865746