DocumentCode :
1769541
Title :
The short-term memory (d.c. response) of the memristor demonstrates the causes of the memristor frequency effect
Author :
Gale, Ella ; de Lacy Costello, Ben ; Erokhin, Victor ; Adamatzky, Andrew
Author_Institution :
Center for Unconventional Comput., Univ. of the West of England, Bristol, UK
fYear :
2014
fDate :
1-5 June 2014
Firstpage :
2812
Lastpage :
2815
Abstract :
A memristor is often identified by showing its distinctive pinched hysteresis curve and testing for the effect of frequency. The hysteresis size should relate to frequency and shrink to zero as the frequency approaches infinity. Although mathematically understood, the material causes for this are not well known. The d.c. response of the memristor is a decaying curve with its own timescale. We show via mathematical reasoning that this decaying curve when transformed to a.c. leads to the frequency effect by considering a descretized curve. We then demonstrate the validity of this approach with experimental data from two different types of memristors.
Keywords :
hysteresis; memristors; decaying curve; hysteresis size; memristor DC response; memristor frequency effect; pinched hysteresis curve; short term memory; Current measurement; Frequency measurement; Hysteresis; Magnetic hysteresis; Memristors; Time measurement; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (ISCAS), 2014 IEEE International Symposium on
Conference_Location :
Melbourne VIC
Print_ISBN :
978-1-4799-3431-7
Type :
conf
DOI :
10.1109/ISCAS.2014.6865758
Filename :
6865758
Link To Document :
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