Monte Carlo study of low and high-field electron transport in GaN-based heterostructures

Author

Thobel, J.-L. ; Dessenne, F. ; Dalle, C.

Author_Institution

Inst. d´Electron., de Microelectron. et de Nanotechnol., Univ. Lille1, Villeneuve-d´Ascq, France

fYear

2014

fDate

3-6 June 2014

Firstpage

1

Lastpage

4

Abstract

Electron transport properties of GaN-based heterostructures are investigated by means of a Monte Carlo model, which considers a large number of subbands in several valleys. Room-temperature low-field mobility consistent with experimental results is obtained provided that screening of phonon scattering is accounted for. In intrinsic heterostructures the mobility is always greater than in bulk GaN. Dislocations strongly reduce mobility at low electron density. Transport under applied field up to 300 kV/cm is also investigated. The peak velocity is found to decrease when electron density is increased.

Keywords

III-V semiconductors; Monte Carlo methods; aluminium compounds; dislocations; electron density; electron mobility; gallium compounds; phonons; semiconductor heterojunctions; wide band gap semiconductors; GaN-AlIn; GaN-based heterostructures; Monte Carlo study; dislocations; electron density; high-field electron transport property; intrinsic heterostructures; low-field electron transport property; low-field mobility; phonon scattering screening; temperature 293 K to 298 K; Aluminum gallium nitride; Charge carrier density; Gallium nitride; HEMTs; Monte Carlo methods; Phonons; Scattering; AlInN; GaN; Monte Carlo; heterostructure; high-field transport; mobility;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics (IWCE), 2014 International Workshop on

Conference_Location

Paris

Type

conf

DOI

10.1109/IWCE.2014.6865820

Filename

6865820