Modeling of FDSOI and trigate devices: What can we learn from Non-Equilibrium Green´s Functions ?

Author

Niquet, Y.M. ; Nguyen, Viet Hung ; Triozon, Francois ; Duchemin, Ivan ; Li, Jie ; Nier, O. ; Rideau, D.

fYear

2014

fDate

3-6 June 2014

Firstpage

1

Lastpage

2

Abstract

As the characteristic size of the devices is now reaching the sub-15 nm range, it has become essential to assess the effects of quantum corrections on the electrical performances. The Non-Equilibrium Green´s Functions (NEGF) method is one of the most versatile frameworks for that purpose. It can deal with quantum confinement, elastic and inelastic scattering in a seamless way. Although numerically intensive, NEGF has benefited from recent advances in computational methodologies and from the increasing availability of high-performance computers. It has now reached a level of maturity where it can be applied to industrial technologies and complement semi-classical modeling.

Keywords

Green´s function methods; semiconductor device models; silicon-on-insulator; FDSOI modelling; NEGF method; elastic scattering; electrical performances; fully-depleted silicon-on-insulator; high-performance computers; inelastic scattering; nonequilibrium Green´s functions; quantum correction effects; semiclassical modeling; trigate devices; Computational modeling; Electron mobility; Green´s function methods; Hafnium compounds; Logic gates; Scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics (IWCE), 2014 International Workshop on

Conference_Location

Paris

Type

conf

DOI

10.1109/IWCE.2014.6865823

Filename

6865823