Title :
Influence of anharmonic phonon decay on self-heating in Si nanowire transistors
Author :
Rhyner, R. ; Luisier, Mathieu
Author_Institution :
Integrated Syst. Lab., ETH Zurich, Zürich, Switzerland
Abstract :
Phonon-phonon scattering is included in an atomistic and full-band quantum transport approach where electron and phonon transport are fully coupled based on the Non-equilibrium Green´s function formalism. The investigation of self-heating effects in ultra-scaled Si nanowire transistors shows that the artificial accumulation of high energy phonons caused by electron relaxations close to the drain region is softened due to the phonon decay process. As a consequence, the device current is increased in the ON-state and the effective lattice temperature is reduced.
Keywords :
Green´s function methods; MOSFET; elemental semiconductors; nanowires; silicon; MOSFET; Si; anharmonic phonon decay; artificial accumulation; atomistic approach; drain region; electron relaxations; electron transport; full-band quantum transport approach; high energy phonons; metal-oxide-semiconductor field-effect-transistors; non-equilibrium Green function formalism; phonon transport; phonon-phonon scattering; self-heating; ultra-scaled nanowire transistors; Lattices; Logic gates; Optical scattering; Phonons; Silicon; Transistors; Anharmonic phonon decay; NEGF; atomistic; full-band; quantum transport; self-heating;
Conference_Titel :
Computational Electronics (IWCE), 2014 International Workshop on
Conference_Location :
Paris
DOI :
10.1109/IWCE.2014.6865826