DocumentCode
1769637
Title
Impact of functionalization patterns on the performance of CNTFETs
Author
Claus, Martin ; Teich, D. ; Mothes, Sven ; Seifert, Gerhard ; Schroter, Michael
Author_Institution
Center for Advancing Electron. Dresden, Tech. Univ. Dresden, Dresden, Germany
fYear
2014
fDate
3-6 June 2014
Firstpage
1
Lastpage
2
Abstract
Covalent functionalization of carbon nanotubes (CNTs) might be an option to optimize the behavior of CNT field effect transistors (FETs) [1] (despite all related technological problems). In principle, the atoms or molecules used for functionalizing are placed randomly along the CNT or they are high-ordered in decoration patterns. Here, only high-ordered functionalization patterns are studied (i) to convert metallic CNTs into semiconducting CNTs and (ii) to reduce or to increase the ambipolarity of a semiconducting CNT.
Keywords
carbon nanotube field effect transistors; CNT field effect transistors; CNTFETs; carbon nanotubes; covalent functionalization patterns; decoration patterns; high-ordered functionalization patterns; metallic CNTs; semiconducting CNTs; CNTFETs; Carbon nanotubes; Electron tubes; Mathematical model; Numerical models; Photonic band gap;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics (IWCE), 2014 International Workshop on
Conference_Location
Paris
Type
conf
DOI
10.1109/IWCE.2014.6865832
Filename
6865832
Link To Document