Title :
Uncovering the temperature of the hotspot in nanoscale devices
Author :
Raleva, Katerina ; Bury, E. ; Kaczer, Ben ; Vasileska, D.
Author_Institution :
Fac. of Electr. Eng. & Inf. Technol., Ss Cyril & Methodius Univ., Skopje, Macedonia
Abstract :
We present for the first time multi-scale modeling of self-heating effects in conventional MOSFET devices in a common-source and common-drain configurations in which one of the devices is the device under test (DUT) and the other device is the sensor. Via comparisons to experimental measurements performed at IMEC, we are able to uncover the temperature of the hot spot. This is also the first study in which a circuit with two transistors is being simulated using thermal particle-based device simulations.
Keywords :
MOSFET; DUT; IMEC; MOSFET devices; common-drain configurations; common-source configurations; device under test; hotspot; multiscale modeling; nanoscale devices; self-heating effects; thermal particle-based device simulations; Heating; Integrated circuit modeling; Optical scattering; Optical sensors; Phonons; Temperature measurement; Temperature sensors; hot-spot; multi-scale modeling; self-heating; thermal particle-based device simulations;
Conference_Titel :
Computational Electronics (IWCE), 2014 International Workshop on
Conference_Location :
Paris
DOI :
10.1109/IWCE.2014.6865840
