DocumentCode :
1769677
Title :
Remote soft-optical phonon scattering in Si nanowire FETs
Author :
Barker, John R. ; Martinez, A.
Author_Institution :
Sch. of Eng., Univ. of Glasgow, Glasgow, UK
fYear :
2014
fDate :
3-6 June 2014
Firstpage :
1
Lastpage :
3
Abstract :
In this work we calculate the impact of remote SO phonon scattering on the transfer characteristics of gate-all-around Si nanowire transistors. The polar SO phonons are confined to the HfO2/Si interface. Nanowire transistors with two different cross-sections are considered. The results show that the impact on the drain current is of the same order and of the same importance as other commonly used bulk-type phonons.
Keywords :
elemental semiconductors; field effect transistors; nanowires; phonons; silicon; HfO2-Si; bulk-type phonons; drain current; gate-all-around silicon nanowire FET; gate-all-around silicon nanowire field effect transistors; polar SO phonons; remote SO phonon scattering; remote soft-optical phonon scattering; transfer characteristics; Educational institutions; Logic gates; MOSFET; Phonons; Scattering; Silicon; NEGF; Si nanowires; remote SO phonons;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computational Electronics (IWCE), 2014 International Workshop on
Conference_Location :
Paris
Type :
conf
DOI :
10.1109/IWCE.2014.6865851
Filename :
6865851
Link To Document :
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