Title :
Remote soft-optical phonon scattering in Si nanowire FETs
Author :
Barker, John R. ; Martinez, A.
Author_Institution :
Sch. of Eng., Univ. of Glasgow, Glasgow, UK
Abstract :
In this work we calculate the impact of remote SO phonon scattering on the transfer characteristics of gate-all-around Si nanowire transistors. The polar SO phonons are confined to the HfO2/Si interface. Nanowire transistors with two different cross-sections are considered. The results show that the impact on the drain current is of the same order and of the same importance as other commonly used bulk-type phonons.
Keywords :
elemental semiconductors; field effect transistors; nanowires; phonons; silicon; HfO2-Si; bulk-type phonons; drain current; gate-all-around silicon nanowire FET; gate-all-around silicon nanowire field effect transistors; polar SO phonons; remote SO phonon scattering; remote soft-optical phonon scattering; transfer characteristics; Educational institutions; Logic gates; MOSFET; Phonons; Scattering; Silicon; NEGF; Si nanowires; remote SO phonons;
Conference_Titel :
Computational Electronics (IWCE), 2014 International Workshop on
Conference_Location :
Paris
DOI :
10.1109/IWCE.2014.6865851
