2D Maxwell/transport time domain modeling of THz GaN distributed transferred electron device

Author

Dalle, C. ; Dessenne, F. ; Thobel, J.-L.

Author_Institution

Dept. Hyperfreq. et Semicond., Inst. d´Electron., de Microelectron. et de Nanotechnol., Villeneuve-d´Ascq, France

fYear

2014

fDate

3-6 June 2014

Firstpage

1

Lastpage

4

Abstract

In order to investigate the distributed semiconductor device high frequency operation, we are developing a 2D/3D time-domain electromagnetic physical simulator. It is based on a self-consistent solution of both the Maxwell equations and the free carrier macroscopic conservation equation sets issued from the Boltzmann general transport equation. Its large potential application field presently concerns the GaN THz distributed Transferred Electron Device (TED).

Keywords

Gunn devices; III-V semiconductors; Maxwell equations; gallium compounds; semiconductor device models; terahertz wave devices; time-domain analysis; wide band gap semiconductors; 2D Maxwell-transport time domain modeling; 2D-3D time-domain electromagnetic physical simulator; Boltzmann general transport equation; GaN; Maxwell equation; THz gallium nitride distributed transferred electron device; distributed semiconductor device; free carrier macroscopic conservation equation set; frequency operation; gallium nitride THz distributed TED; Equations; Gallium nitride; Integrated circuit modeling; Mathematical model; Numerical models; Radio frequency; Time-domain analysis; Gallium Nitride; THz distributed semiconductor devices; Time-domain coupled Electromagnetic/Transport modeling; Transferred electron device;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics (IWCE), 2014 International Workshop on

Conference_Location

Paris

Type

conf

DOI

10.1109/IWCE.2014.6865861

Filename

6865861