Conduction gap of strained/unstrained graphene junctions: Direction dependence

Though the energy bandgap of strained graphene remains zero, the shift of Dirac points in the k-space due to strain-induced deformation of graphene lattice can lead to the appearance of a finite conduction gap of several hundreds meV in strained/unstrained junctions with a strain of only a few percent. This conduction gap strongly depends on the direction of applied strain and the transport direction. Here, we study its properties with respect to these quantities. This work provides useful information for further exploiting graphene strained junctions in electronic applications.