Title :
Investigation of hot photons in GaN/AlN high electron mobility transistor based on Stokes Raman scattering
Author :
Ruolin Chen ; Guan Sun ; Ding, Yujie J. ; Khurgin, Jacob B.
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Abstract :
We investigated hot phonons based on Stokes Raman scattering from a GaN/AlN high electron mobility transistor. Such a simple method is advantageous compared with the method based on Stokes and anti-Stokes Raman scattering.
Keywords :
III-V semiconductors; Raman spectra; aluminium compounds; gallium compounds; high electron mobility transistors; phonons; wide band gap semiconductors; GaN-AlN; GaN-AlN high electron mobility transistor; antiStokes Raman scattering; hot phonons; hot photons; Gallium nitride; HEMTs; Measurement by laser beam; Phonons; Raman scattering; Temperature distribution; Temperature measurement;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
