DocumentCode
1769995
Title
Investigation of hot photons in GaN/AlN high electron mobility transistor based on Stokes Raman scattering
Author
Ruolin Chen ; Guan Sun ; Ding, Yujie J. ; Khurgin, Jacob B.
Author_Institution
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
fYear
2014
fDate
8-13 June 2014
Firstpage
1
Lastpage
2
Abstract
We investigated hot phonons based on Stokes Raman scattering from a GaN/AlN high electron mobility transistor. Such a simple method is advantageous compared with the method based on Stokes and anti-Stokes Raman scattering.
Keywords
III-V semiconductors; Raman spectra; aluminium compounds; gallium compounds; high electron mobility transistors; phonons; wide band gap semiconductors; GaN-AlN; GaN-AlN high electron mobility transistor; antiStokes Raman scattering; hot phonons; hot photons; Gallium nitride; HEMTs; Measurement by laser beam; Phonons; Raman scattering; Temperature distribution; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
6988657
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