Title :
Charge carrier relaxation processes in TbAs nanoinclusions in GaAs measured by optical-pump THz-probe transient absorption spectroscopy
Author :
Vanderhoef, Laura R. ; Azad, Abul K. ; Bomberger, Cory C. ; Chowdhury, Dibakar Roy ; Chase, D. Bruce ; Taylor, Antoinette J. ; Zide, Joshua M. O. ; Doty, Matthew F.
Author_Institution :
Dept. of Phys. & Astron., Univ. of Delaware, Newark, DE, USA
Abstract :
By analyzing how carrier relaxation rates depend on pump fluence and sample temperature, we conclude that states of TbAs embedded in GaAs are saturable. This suggests the existence of a bandgap for TbAs nanoparticles.
Keywords :
III-V semiconductors; carrier relaxation time; energy gap; inclusions; nanoparticles; terahertz wave spectra; terbium compounds; GaAs-TbAs; TbAs nanoinclusions; TbAs nanoparticles; TbAs states; bandgap; carrier relaxation rates; charge carrier relaxation process; optical pump THz-probe transient absorption spectroscopy; pump fluence; Electron traps; Gallium arsenide; Optical pumping; Photonic band gap; Probes;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
