Title :
Electroluminescence from a GaAs/AlGaAs heterostructure at high electric fields: Evidence for real- & k-space transfer
Author :
Weilu Gao ; Xuan Wang ; Rui Chen ; Strasser, G. ; Bird, Jonathan P. ; Kono, Junichiro
Author_Institution :
Dept. of Electr. & Comput. Eng., Rice Univ., Houston, TX, USA
Abstract :
We study impact-ionization-induced electroluminescence (EL) from a GaAs/AlGaAs heterostructure under high bias. In addition to k-space transfer (the Gunn effect), EL spectra indicate real-space (GaAs-to-AlGaAs) transfer. Microscopy shows strong EL near the anode.
Keywords :
Gunn effect; III-V semiconductors; aluminium compounds; electroluminescence; fluorescence; gallium arsenide; impact ionisation; semiconductor heterojunctions; GaAs-AlGaAs; Gunn effect; electroluminescence; impact-ionization-induced electroluminescence; k-space transfer; Anodes; Educational institutions; Electroluminescence; Gallium arsenide; Graphical models; HEMTs; MODFETs;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
