Title :
Implantation of proximal NV clusters in diamond by lithographically defined silicon masks with 5 nm resolution
Author :
Bayn, Igal ; Chen, Edward H. ; Luozhou Li ; Trusheim, Matthew E. ; Schroder, Tim ; Gaathon, Ophir ; Ming Lu ; Stein, Aaron ; Mingzhao Liu ; Kisslinger, Kim ; Englund, Dirk
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Massachusetts Inst. of Technol., Cambridge, MA, USA
Abstract :
We present the fabrication of nitrogen-vacancy (NV) spin chains by implantation through a silicon mask on diamond. A minimum implantation aperture width of 5 nm is produced. Super-resolution measurements reveal NV lines 26 nm wide and minimal NV-pitch of 8 nm.
Keywords :
V-centres; diamond; elemental semiconductors; nitrogen; semiconductor doping; vacancies (crystal); wide band gap semiconductors; C:N; diamond; lithographically defined silicon masks; minimal NV-pitch; minimum implantation aperture width; nitrogen-vacancy spin chain fabrication; proximal NV cluster implantation; superresolution measurements; Apertures; Diamonds; Fabrication; Image resolution; Imaging; Nitrogen; Silicon;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
