DocumentCode
1770660
Title
Electrically driven single-photon emission from site-controlled InGaN/GaN quantum dots
Author
Lei Zhang ; Chu-Hsiang Teng ; Pei-Cheng Ku ; Hui Deng
Author_Institution
Dept. of Phys., Univ. of Michigan, Ann Arbor, MI, USA
fYear
2014
fDate
8-13 June 2014
Firstpage
1
Lastpage
2
Abstract
We report single-photon emission from electrically driven site-controlled InGaN/GaN dot-in-nanowires, fabricated from a planar single InGaN quantum well LED using a top-down approach. Each dot-in-nanowire´s formation site, diameter, height and material compositions were precisely controlled.
Keywords
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; nanofabrication; nanophotonics; nanowires; optical fabrication; optical materials; semiconductor quantum dots; wide band gap semiconductors; InGaN-GaN; dot-in-nanowire diameter; dot-in-nanowire height; electrically driven single-photon emission; formation site; material compositions; planar single quantum well LED; site-controlled InGaN-GaN quantum dots; top-down approach; Arrays; Fabrication; Gallium nitride; Light emitting diodes; Materials; Photonics; Quantum dots;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
6989039
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