Title :
Self-assembled InN growth on GaN nanorod
Author :
Shih-Pang Chang ; Yung-Yu Lai ; Yuh-Jen Cheng ; Jung Han ; Hao-Chung Kuo ; Chien-Chung Lin ; Chun-Yen Chang
Author_Institution :
Dept. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
We report a self-assembled InN epitaxial growth on GaN nanorods. Crystalline InN hexagonal structure was selectively grown on the sidewall edges of GaN hexagonal nanorods. The growth mechanism and the photoluminescent property will be discussed.
Keywords :
III-V semiconductors; epitaxial growth; indium compounds; photoluminescence; self-assembly; semiconductor epitaxial layers; semiconductor growth; wide band gap semiconductors; GaN; GaN hexagonal nanorod; InN; crystalline InN hexagonal structure; photoluminescent property; self-assembled epitaxial growth; sidewall edge; Educational institutions; Epitaxial growth; Gallium nitride; Self-assembly; Strain; Substrates;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
