DocumentCode :
1770678
Title :
Electro-optic and converse piezoelectric coefficients of epitaxial thin films: GaN grown on Si, and (Sr,Ba)Nb2O6 (SBN) grown on Pt coated MgO
Author :
Cuniot-Ponsard, M. ; Saraswati, I. ; Ko, S.M. ; Halbwax, M. ; Cho, Young H. ; Dogheche, E.
Author_Institution :
Lab. Charles Fabry (LCF), Univ. Paris-Sud, Palaiseau, France
fYear :
2014
fDate :
8-13 June 2014
Firstpage :
1
Lastpage :
2
Abstract :
We report the first measurement of the (r13, r33) Pockels electro-optic coefficients in a SBN thin film and in a GaN thin film grown on silicon. The converse-piezoelectric and electro-absorptive coefficients are simultaneously determined.
Keywords :
III-V semiconductors; MOCVD; Pockels effect; barium compounds; electroabsorption; ferroelectric thin films; gallium compounds; piezoelectric thin films; semiconductor epitaxial layers; semiconductor growth; sputter deposition; strontium compounds; wide band gap semiconductors; (SrBa)Nb2O6; GaN; MgO-Pt; Pockel electro-optic coefficient; Si; converse piezoelectric coefficient; electro-absorptive coefficient; epitaxial thin films; nonlinear optical materials; Electrooptic modulators; Electrooptical waveguides; Epitaxial growth; Gallium nitride; Semiconductor device measurement; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
6989047
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1770678
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