• DocumentCode
    1770715
  • Title

    Femtosecond mode-locked VECSEL from widely cw-tunable gain chips

  • Author

    Head, C. Robin ; Hein, Alexander ; Shaw, E.A. ; Turnbull, Andrew P. ; Unger, P. ; Tropper, A.C.

  • Author_Institution
    Phys. & Astron., Univ. of Southampton, Southampton, UK
  • fYear
    2014
  • fDate
    8-13 June 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We describe passively mode-locking of an InGaAs quantum well laser, comparing different dielectric coatings applied to the same gain wafer. A 7-fold variation in pulse duration down to 817 fs was observed.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser tuning; optical pulse generation; quantum well lasers; surface emitting lasers; InGaAs; VECSEL; dielectric coatings; femtosecond mode-locking; passive mode-locking; quantum well laser; time 817 ps; widely cw-tunable gain chips; Coatings; Laser mode locking; Optical pumping; Optical reflection; Surface emitting lasers; Ultrafast optics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2014 Conference on
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • Filename
    6989064
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1770715