Title :
GaAsBi laser diodes with low temperature dependence of lasing wavelength
Author :
Fuyuki, Takashi ; Yoshioka, Ryuichi ; Yoshida, Kenta ; Yoshimoto, Masahiko
Author_Institution :
Dept. of Electron., Kyoto Inst. of Technol., Kyoto, Japan
Abstract :
GaAs1-xBix laser diodes (LDs) with low temperature dependence of the oscillation wavelength (dλ/dT) are demonstrated. The value dλ/dT for a GaAs0.97Bi0.03 LD was as low as 0.16 nm/K. This reduction is attributed to a reduction in the temperature coefficient of the band gap.
Keywords :
gallium arsenide; semiconductor lasers; wide band gap semiconductors; GaAs0.97Bi0.03; band gap; laser diodes; lasing wavelength; low temperature dependence; oscillation wavelength; temperature coefficient reduction; Bismuth; Gallium arsenide; Lasers; Oscillators; Photonic band gap; Temperature dependence; Temperature measurement;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
