Title :
Relation between interband dipole and momentum matrix elements in semiconductors
Author :
Gu, Bin ; Kwong, Nai H. ; Binder, Rolf
Author_Institution :
Coll. of Opt. Sci. & Dept. of Phys., Univ. of Arizona, Tucson, AZ, USA
Abstract :
The relation between dipole and momentum matrix elements in crystals, treated with periodic boundary conditions, is revisited. A correction term to standard expressions is found to be large for bulk GaAs, small for THz transitions.
Keywords :
III-V semiconductors; gallium arsenide; terahertz wave spectra; GaAs; Interband Dipole; THz transition; momentum matrix element; periodic boundary condition; semiconductors; Adaptive optics; Boundary conditions; Crystals; Finite element analysis; Gallium arsenide; Lattices; Nonlinear optics;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
