DocumentCode :
1770769
Title :
Quantum coherence in bulk GaAs studied by interference between electron-phonon coupled states
Author :
Nakamura, K.G. ; Hayashi, Shin´ichiro ; Kato, Kazuhiko ; Norimatsu, K. ; Kayanuma, Y.
Author_Institution :
Mater. & Struct. Lab., Tokyo Inst. of Technol., Yokohama, Japan
fYear :
2014
fDate :
8-13 June 2014
Firstpage :
1
Lastpage :
2
Abstract :
Both electronic and phonon coherence in bulk GaAs is studied using an interference experiment of electron-phonon coupled states induced by two phase-locked femtosecond pulses. Full coherence remains within ~ 45 fs at room temperature.
Keywords :
III-V semiconductors; electron-phonon interactions; gallium arsenide; high-speed optical techniques; GaAs; electron-phonon coupled states; electronic coherence; phonon coherence; quantum coherence; temperature 293 K to 298 K; two phase-locked femtosecond pulses; Coherence; Gallium arsenide; Interference; Optical pulses; Optical pumping; Optical reflection; Phonons;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
6989090
Link To Document :
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