DocumentCode :
1770773
Title :
Spectral diffusion of excitons in disordered GaAs quantum wells
Author :
Singh, Rajdeep ; Moody, Galan ; Siemens, M.E. ; Li, Huaqing ; Cundiff, S.T.
Author_Institution :
Nat. Inst. of Stand. & Technol., Univ. of Colorado, Boulder, CO, USA
fYear :
2014
fDate :
8-13 June 2014
Firstpage :
1
Lastpage :
2
Abstract :
We have studied spectral diffusion of excitons in GaAs quantum wells using two-dimensional coherent spectroscopy. Localized and delocalized excitons exhibit distinct spectral diffusion characteristics. These results cannot be explained in the strong redistribution approximation.
Keywords :
Fourier transform spectra; III-V semiconductors; excitons; gallium arsenide; semiconductor quantum wells; two-dimensional spectroscopy; GaAs; delocalized excitons; disordered quantum wells; spectral diffusion; two-dimensional coherent spectroscopy; Correlation; Educational institutions; Excitons; Gallium arsenide; Sociology; Spectroscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2014 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
6989092
Link To Document :
بازگشت