Title :
Understanding carrier transport in the ultimate physical scaling limit of MOSFETs
Author :
Tsuchiya, Hideaki
Author_Institution :
Dept. of Electr. & Electron. Eng., Kobe Univ., Kobe, Japan
Abstract :
We discuss the impact of quantum transport and atomistic effects on nano-MOS transistors using computer simulations. We stress the importance of understanding carrier transport at the atomic level to utilize emerging device technologies.
Keywords :
MOSFET; MOSFET; atomic level; atomistic effects; carrier transport; computer simulations; nanoMOS transistors; quantum transport; ultimate physical scaling limit; Electron mobility; Fluctuations; MOSFET; Performance evaluation; Scattering; Silicon; Tunneling; ballistic transport; quantum and atomistic effects;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-3614-4
DOI :
10.1109/IMFEDK.2014.6867045
