Gate voltage dependence of channel length modulation for Ge p-channel MOSFETs

Author

Goto, Yuta ; Hiroki, Akira ; Matsuda, Akihiro ; Nakamura, Masaaki ; JongChul Yoon

Author_Institution

Grad. Sch. of Sci. Technol., Kyoto Inst. of Technol., Kyoto, Japan

fYear

2014

fDate

19-20 June 2014

Firstpage

1

Lastpage

2

Abstract

This paper describes gate voltage dependence of channel length modulation for Ge p-channel MOSFETs. The gate voltage dependence of the channel length modulation is extracted from experimental current voltage characteristics. It is found that Ge p-channel MOSFETs show the gate voltage dependence of channel length modulation. To investigate the effects of the VGS dependence of λ on the current voltage characteristics, the analytical MOSFET model is compared with the experimental data. It is found that the VGS dependence of λ is essential in simulation of the current voltage characteristics for Ge p-channel MOSFETs.

Keywords

MOSFET; elemental semiconductors; germanium; modulation; semiconductor device models; Ge; analytical MOSFET model; channel length modulation; current voltage characteristics; gate voltage dependence; p-channel MOSFET; Analytical models; Current-voltage characteristics; Logic gates; MOSFET; Mathematical model; Modulation; Semiconductor device modeling; Ge p-channel MOSFETs; analytical current model; channel length modulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for

Conference_Location

Kyoto

Print_ISBN

978-1-4799-3614-4

Type

conf

DOI

10.1109/IMFEDK.2014.6867054

Filename

6867054