Title :
Study of thin film solar cell with metal-Insulator-semiconductor diode to control carrier recombination
Author :
Wakamiya, Shota ; Matsuo, Naoto ; Kobayashi, Takahiro ; Heya, Akira
Author_Institution :
Dept. of Mater. Sci. & Chem., Univ. of Hyogo, Himeji, Japan
Abstract :
We presented the novel structure of the solar cell that has the metal-Insulator-semiconductor (MIS) diode at the side wall of the electricity generation layer. It is found that the gate voltage is effective to improve the conversion efficiency of the solar cell with large surface recombination velocities.
Keywords :
MIS devices; semiconductor diodes; solar cells; surface recombination; thin film devices; MIS diode; carrier recombination control; electricity generation layer; gate voltage; large surface recombination velocity; metal insulator semiconductor diode; solar cell conversion efficiency improvement; thin film solar cell; Electricity; Electrodes; Impurities; Logic gates; Photovoltaic cells; Radiative recombination; Silicon; MIS; carrier recombination; gate voltage; solar cell;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2014 IEEE International Meeting for
Conference_Location :
Kyoto
Print_ISBN :
978-1-4799-3614-4
DOI :
10.1109/IMFEDK.2014.6867055
